Mr. Alfio Samuele Mancuso | Material Science | Young Scientist Award
PhD Candidate at Catania Univerisity/ CNR-IMM, Italy
Alfio Samuele is a highly promising young researcher in the field of material science and nanotechnology, currently pursuing a Ph.D. at the University of Catania with a focus on high-power devices and neutron detectors for nuclear fusion applications. His academic journey, spanning a Bachelor’s and Master’s in Chemistry, has equipped him with a strong foundation in materials chemistry and nanotechnology. He has demonstrated technical expertise in advanced characterization techniques and simulation tools, and his research contributions include peer-reviewed publications and international conference presentations. Alfio’s ongoing international collaboration with the Institute of Microelectronics of Barcelona further highlights his commitment to scientific advancement. He is an active member of professional bodies like IEEE and MRS. While expanding his publication record and detailing his recognitions could further strengthen his profile, his current achievements, interdisciplinary research, and potential for future impact make him a strong and deserving candidate for the Young Scientist Award.
Professional Profile
Education🎓
Alfio Samuele has a solid academic background in chemistry and materials science, which has laid the foundation for his advanced research career. He earned his Bachelor’s degree in Chemistry from an Italian university, where he focused on hybrid nanosystems involving molybdenum disulfide nanosheets and plasmonic nanoparticles for theranostic applications. He continued his education with a Master’s degree in Chemical Sciences, specializing in Materials Chemistry and Nanotechnology, at the University of Catania. His Master’s thesis centered on the chemical vapor deposition synthesis and characterization of bismuth ferrite thin films. Currently, he is pursuing a Ph.D. in Material Science and Nanotechnology within the Physics Department at the University of Catania. His doctoral research, under the guidance of Dr. Francesco La Via and Prof. Lucia Calcagno, involves the development of high-power devices and neutron detectors for nuclear fusion applications. This progressive academic trajectory underscores his strong theoretical knowledge and practical skills in nanotechnology and advanced materials.
Professional Experience📝
Alfio Samuele has developed substantial professional experience in advanced materials research, particularly in the context of semiconductor device fabrication and neutron detection. Since October 2022, he has been a Ph.D. researcher at the Institute for Microelectronics and Microsystems (CNR-IMM) in Catania, Italy, where he is engaged in the development and characterization of high-power devices and neutron detectors using 4H-SiC. His work involves sophisticated techniques such as Deep Level Transient Spectroscopy (DLTS), electrical characterization, hydrogen etching, and microscopy methods including SEM, TEM, and AFM. In March 2025, he began a visiting research period at the Institute of Microelectronics of Barcelona (CSIC), where he is conducting nuclear microprobe irradiation studies and optimizing detector structures using Synopsys simulation tools. His responsibilities also extend to ion beam techniques such as IBIC microscopy. Alfio’s hands-on experience with cutting-edge tools and international collaborations illustrates his technical competence and commitment to advancing research in material science and detector technology.
Research Interest🔎
Alfio Samuele’s research interests lie at the intersection of material science, nanotechnology, and applied physics, with a strong focus on semiconductor devices for nuclear and high-temperature applications. His primary research is centered on the development and optimization of high-power electronic components and neutron detectors based on silicon carbide (4H-SiC), particularly for use in extreme environments such as nuclear fusion reactors. He is deeply interested in defect characterization, radiation hardness, and thermal stability of semiconductor materials, employing techniques like DLTS, I-V/C-V measurements, and spectroscopic analysis. Additionally, he explores the use of advanced fabrication methods such as hydrogen etching and chemical vapor deposition. Alfio is also engaged in the simulation of device performance using Synopsys tools to refine detector design and improve material efficiency. His work reflects a strong interdisciplinary approach, merging experimental research with computational modeling to address real-world challenges in energy systems, radiation detection, and next-generation electronics.
Award and Honor🏆
Alfio Samuele has been recognized for his academic excellence and contributions to scientific research through various awards and honors. Although specific award titles are not listed, his active participation in prestigious international conferences suggests notable achievements, including potential recognition for best poster or presentation. His involvement in events such as the International Conference on Silicon Carbide and Related Materials (ISCRM), WOCSDICE-EXMATEC workshops, and the International Workshop on Detection Systems and Techniques highlights his standing within the research community. Moreover, his selection as a visiting Ph.D. student at the Institute of Microelectronics of Barcelona (CSIC) reflects both academic merit and international recognition of his research capabilities. Alfio’s acceptance into the 1st IMM Doctoral Summer School also underscores his dedication to continuous learning and professional development. As he progresses in his academic career, formal documentation of his awards and honors would further strengthen his professional profile and validate his growing impact in the scientific field.
Research Skill🔬
Alfio Samuele possesses a comprehensive set of research skills that span experimental techniques, data analysis, and simulation modeling within the fields of materials science and nanotechnology. His expertise includes electrical and structural characterization of semiconductor devices using advanced methods such as Deep Level Transient Spectroscopy (DLTS), I-V and C-V measurements, alpha and neutron spectroscopy, and microscopy techniques like SEM, TEM, AFM, and optical microscopy. He has hands-on experience with hydrogen etching processes and chemical vapor deposition, which are critical for material synthesis and surface treatment. In addition to laboratory competencies, Alfio is proficient in using simulation tools such as Synopsys Sentaurus for device modeling and performance prediction, enabling him to bridge experimental work with theoretical analysis. His skills in data analysis are reinforced through software like Origin, Python, Excel, ImageJ, and Digital Micrograph. This diverse skill set equips him to conduct high-level research in the development of radiation-resistant devices and high-power electronics.
Conclusion💡
Alfio Samuele is a promising young scientist whose research in materials for nuclear fusion, neutron detection, and nanotechnology is both timely and technically advanced. His solid foundation, international exposure, and technical expertise make him a suitable and competitive candidate for the Young Scientist Award.
Publications Top Noted✍️
📘 Journal Article
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Authors: A.S. Mancuso, E. Sangregorio, A. Muoio, S. De Luca, M.H. Kushoro, E. Gallo, S. Vanellone, E. Quadrivi, A. Trotta, L. Calcagno, F. La Via
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Year: 2025
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Citation:
Mancuso, A.S., Sangregorio, E., Muoio, A., De Luca, S., Kushoro, M.H., Gallo, E., Vanellone, S., Quadrivi, E., Trotta, A., Calcagno, L., & La Via, F. (2025). Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector. Materials, 18(11), 1–14. https://doi.org/10.3390/ma18112413
📙 Conference Proceeding
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Authors: A.S. Mancuso, S. Boninelli, M. Camarda, P. Fiorenza, A. Mio, V. Scuderi, P. Godignon, S. Aslanidou, L. Calcagno, F. La Via
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Year: 2023
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Citation:
Mancuso, A.S., Boninelli, S., Camarda, M., Fiorenza, P., Mio, A., Scuderi, V., Godignon, P., Aslanidou, S., Calcagno, L., & La Via, F. (2023). Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions. In Proceedings of the 20th International Conference on Silicon Carbide and Related Materials (ISCRM), Sorrento, Italy. https://doi.org/10.4028/p-eWPhI9

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