Shahid Beheshti University, Iran
Dr. Arash Yazdanpanah Goharrizi is a distinguished professor in electrical engineering at Shahid Beheshti University, Tehran, Iran. His research focuses on nanotechnology, semiconductor devices, and electronic transport properties, with contributions to optimizing transistor performance, nanoribbon-based sensors, and first-principles calculations of novel materials. He has published extensively in high-impact journals, collaborating with international researchers to advance the field of microelectronics and nanostructures. In addition to research, Dr. Goharrizi actively reviews scientific manuscripts and contributes to academic peer-review processes.
Professional Profile
Education
Dr. Arash Yazdanpanah Goharrizi earned his academic qualifications from Shahid Beheshti University, Tehran, Iran. He initially served as an assistant professor in electrical engineering at the same institution, where he developed expertise in semiconductor physics, nanomaterials, and device modeling. His academic training provided him with a strong foundation in theoretical and applied aspects of electronic devices, paving the way for his contributions to advanced semiconductor research.
Professional Experience
Dr. Goharrizi currently serves as a professor at Shahid Beheshti University, where he leads research in electrical engineering, with a focus on micro- and nanostructures. Over the years, he has conducted groundbreaking studies on electronic and transport properties of advanced materials like phosphorene, antimonene, and germanene. His work has led to numerous publications in esteemed journals such as ACS Applied Electronic Materials, IEEE Transactions on Electron Devices, and Physica E. Beyond research, he contributes to academia through peer reviewing and mentoring graduate students in semiconductor device physics and nanoelectronics.
Research Interests
Dr. Arash Yazdanpanah Goharrizi’s research interests lie in the fields of nanoelectronics, semiconductor devices, and computational materials science. He focuses on the electronic, optical, and transport properties of low-dimensional materials such as phosphorene, antimonene, graphene, and germanene nanoribbons, utilizing first-principles calculations and device modeling to optimize their performance. His studies contribute to advancements in transistor design, Bragg grating-based sensors, and tunneling field-effect transistors (TFETs). Additionally, he explores strain engineering and doping control to enhance device efficiency and scalability. His interdisciplinary research integrates physics, electrical engineering, and material science, aiming to develop next-generation electronic and optoelectronic devices for high-performance computing and sensing applications.
Awards and Honors
Dr. Goharrizi has been recognized for his contributions to semiconductor research and nanoelectronics through various academic and professional honors. His high-impact publications in prestigious journals and collaborations with international researchers reflect his standing in the scientific community. As a peer reviewer for leading journals, he has contributed to the advancement of materials science and electrical engineering. He has also received recognition for his mentorship and guidance of graduate students in advanced semiconductor device research. His work on nanostructured materials and electronic transport properties continues to earn him accolades within the academic and research communities, further establishing his reputation as a leading expert in the field.
Publications Top Noted
- Modeling of lightly doped drain and source graphene nanoribbon field effect transistors
- Authors: M Saremi, M Saremi, H Niazi, AY Goharrizi
- Journal: Superlattices and Microstructures
- Year: 2013
- Citations: 94
- Armchair graphene nanoribbon resonant tunneling diodes using antidote and BN doping
- Authors: AY Goharrizi, M Zoghi, M Saremi
- Journal: IEEE Transactions on Electron Devices
- Year: 2016
- Citations: 93
- Band gap tuning of armchair graphene nanoribbons by using antidotes
- Authors: M Zoghi, AY Goharrizi, M Saremi
- Journal: Journal of Electronic Materials
- Year: 2017
- Citations: 77
- A numerical study of line-edge roughness scattering in graphene nanoribbons
- Authors: A Yazdanpanah, M Pourfath, M Fathipour, H Kosina, S Selberherr
- Journal: IEEE Transactions on Electron Devices
- Year: 2011
- Citations: 71
- Device performance of graphene nanoribbon field-effect transistors in the presence of line-edge roughness
- Authors: AY Goharrizi, M Pourfath, M Fathipour, H Kosina
- Journal: IEEE Transactions on Electron Devices
- Year: 2012
- Citations: 67
- Tuning electronic, magnetic, and transport properties of blue phosphorene by substitutional doping: a first-principles study
- Authors: F Safari, M Fathipour, A Yazdanpanah Goharrizi
- Journal: Journal of Computational Electronics
- Year: 2018
- Citations: 44
- An analytical model for line-edge roughness limited mobility of graphene nanoribbons
- Authors: AY Goharrizi, M Pourfath, M Fathipour, H Kosina, S Selberherr
- Journal: IEEE Transactions on Electron Devices
- Year: 2011
- Citations: 41
- SOI LDMOSFET with up and down extended stepped drift region
- Authors: M Saremi, M Saremi, H Niazi, M Saremi, AY Goharrizi
- Journal: Journal of Electronic Materials
- Year: 2017
- Citations: 40
- A new method for classification and identification of complex fiber Bragg grating using the genetic algorithm
- Authors: A Rostami, A Yazdanpanah-Goharriz
- Journal: Progress In Electromagnetics Research
- Year: 2007
- Citations: 31
- Strain-induced armchair graphene nanoribbon resonant-tunneling diodes
- Authors: M Zoghi, AY Goharrizi
- Journal: IEEE Transactions on Electron Devices
- Year: 2017
- Citations: 30
